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Powdec is able to perform face-down crystal growth by our unique MOCVD technology. For this reason, high quality thin films with low defect density are realized. We can grow on sapphire substrate, GaN substrate, and SiC substrate. We can prepare single-layer to multi-layer, or electronic device and optical device structure according to customer's request. We support your R & D or small production.

Substrate size is available from 2 inches to 6 inches

Powdec’s unique MOCVD technology

Powdec has succeeded in developing a high-voltage, high-current, high-speed power transistor called a polarization super junction. We will support customers who want to use this power transistor or think about commercialization. We can also manufacture and supply your original design devices. For example, we can manufacture LED wafers for micro displays, so please feel free to contact us.

Polarization super junction

μLED display

2022 Oct 13: Release information AlN-templates have been added to the product lineup. (AlN-substrate on sapphire-substrate)
2022 Apr 05: normally-off GaN-PSJ FET was presented at the 69th JSAP Spring Meeting.
2021 Jun 24: Development status and issues of GaN-PSJ power devices on sapphire was announced at the 7th Study Group on Silicon for Power Devices and Related Semiconductor Materials.
2020 Mar 13: 6.6 kV class normally-off GaN-PSJ FET was presented at the 67th JSAP Spring Meeting.
2019 Mar 14: GaN PSJ (Polarization Superjunction) Element was announced in Future of GaN Materials that Contribute to Energy Conservation Society and Its Key Process Technology.

POWDEC is developing next GaN devices for future