POWDEC is developing next GaN devices for future

News

2022 Oct 13

Release information AlN-templates have been added to the product lineup. (AlN-substrate on sapphire-substrate)

2022 Apr 05

normally-off GaN-PSJ FET was presented at the 69th JSAP Spring Meeting.

2021 Jun 24

Development status and issues of GaN-PSJ power devices on sapphire was announced at the 7th Study Group on Silicon for Power Devices and Related Semiconductor Materials.

2020 Mar 13

6.6 kV class normally-off GaN-PSJ FET was presented at the 67th JSAP Spring Meeting.

2019 Mar 14

GaN PSJ (Polarization Superjunction) Element was announced in Future of GaN Materials that Contribute to Energy Conservation Society and Its Key Process Technology.

2018 Sep 18

1.2 kV class normally-off GaN-PSJ FET was presented at 79th JSAP Autumn Meeting.

2018 Mar 17

We announced GaN-PSJ FET with withstand voltage of over 10 kV and GaN-PSJ Schottky Barrier Diode at over 8 kV at the 65 th JSAP Spring Meeting.

2015 Aug

[Newsrelease]POWDEC has developed very low-cost 1,200V rating-voltage GaN power transistors.

2015 Apr 17

The JSAP Spring Meeting,2015 annoced the ｢Normally-Off GaN-PSJ FETs｣

2014 Sep 19

The JSAP Autumn Meeting,2014 annoced the ｢600 V Switching Characteristics of GaN Polarization Super-Junction (PSJ) Transistors on Sapphire substrate｣

2013 Oct 03

POWDEC today announced its breakthrough Polarization Super-junction GaN power transistors on silicon substrates for realization.

2012 Oct 15

President, Dr. Kawai, will present a lecture entitled "Current status and possibility of GaN power devices" at a workshop "The progress in wide-bandgap semiconductor power devices" sponsored by Japan Society of Applied Physics on November 2, 2012.

2012 Feb 24

POWDEC announces 6 kV Gallium Nitride Transistor.

2012 Feb 16

-Press Release-
POWDEC and its PJ-HFET (Polarization-Junction Heterostructure Field-Effect Transistor) have been introduced by POWER Dev' in the January 2012 issue.

2012 Jan 05

The presentation material on "The new technology reduces the cost of GaN power devices" held on 8 November, 2011 sponsored by Nikkei Electronics is now available.
The English version is also available upon request.

2011 Oct 21

　-Press Release-
POWDEC and its super-HFET were introduced by Nikkei Electronics in August 22 issue.
"POWDEC will launch 600V class diodes and transistors before and after 2013."

2011 Oct 21

CEO Kawai will make a presentation entitled "The new technology reduces the cost of GaN power devices." at a seminar on November 8th "GaN power devices make a breakthrough to be a next-generation front runner" sponsored by Nikkei Electronics. Only Japanese is available.

2011 Jun 01

POWDEC is honored to be certified as one of "2011 Frontier Enterprises in Tochigi Prefecture".

2011 May 16

　-Press Release-
POWDEC's super-HFET was introduced by Nikkei Electronics in the May 16 issue.
"1 kV or higher breakdown voltage GaN power transistor catching up on SiC"

2011 May 15

　-10th foundation anniversary-
We appreciate your business for the past 10 year. We continue to provide breakthrough GaN products.

2011 Mar 29

　-Press release-
POWDEC's super-HFET was introduced by Compound Semiconductor in the March 28 issue.
"Powdec GaN Transistor Breaks Barriers - Dramatically reducing power losses, the device increases break-down voltage and eliminates current collapse."

2011 Mar 25

　-Press release-
POWDEC develops a breakthrough Gallium Nitride transistor.
"Ultra low losses, high breakdown voltage, no current collapse"

2011 Mar 21

POWDEC and The University of Sheffield have co-developed a high breakdown-voltage super Hetero-junction Field Effect Transistor (HFET) based on polarization junctions.

2011 Mar 18

Periodic recruitment of 2012-new graduates starts in April.
Information is available at the Hello-work, job-placement offices.

2011 Mar 15

We’d like to convey our sincere condolences to the people who were stricken by the Earthquake.
Our operation is as usual.
Due to the scheduled electric outage by the TEPCO, the connection of telephones is sometimes weak.

2010 Dec

POWDEC and The University of Sheffield have developed a technique to create high-density two-dimentional hole gasses in gallium nitride heterostructures.

2010 Nov

　-Press Release-
POWDEC develops a new GaN power diode.

2010 Jun

POWDEC renews the homepage.

2010 Apr

POWDEC moves works and headquarters to Oyama-shi, Tochigi prefecture.

2009 Dec

POWDEC is awarded the development fund by the Small and Medium Enterprise Agency(METI).

2009 Mar

POWDEC is awarded the research fund by the New Energy and Industrial Technology Development Organization(NEDO).

2008 Oct

POWDEC develops the AlInGaN UV sensors with any cut-off wavelength from 210nm to 400nm.

2007 Dec

POWDEC increases the capital to 768 million yen.

2007 Dec

POWDEC forms a capital and business alliance with Furukawa Co., Ltd.

2007 Mar

POWDEC is awarded the research fund by the New Energy and Industrial Technology Development Organization(NEDO).

2006 Aug

POWDEC is awarded the research fund by the New Energy and Industrial Technology Development Organization(NEDO).

2005 Sep

POWDEC exhibits 100mm-AlGaN/GaN HEMT epi on Si-wafers in TWHM-5 conference.

2005 Aug

POWDEC joins the Open-Laboratory system sponsored by JAXA(Japan Aerospace Exploration Agency).

2004 Dec

POWDEC increases the capital to 268 million yen.

2004 Aug

POWDEC is awarded the SBIC funds from METI(Ministry of Economy, Trade, and Industry).

2003 Jan

POWDEC exhibits first 100mm-AlGaN/GaN HEMT epi-wafers in TWHM-3 conference.

2002 Aug

POWDEC is awarded the research fund by the New Technology Development Foundation.

2002 Jan

POWDEC is certified as a creative medium and small company by prefecture government.

2001 Dec

POWDEC establishes works at Chigasaki-shi, Kanagawa prefecture.

2001 Nov

POWDEC enters into partnership with ULVAC Incorporated.

2001 May

POWDEC K.K. starts with a capital of 65million yen.