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Wafer

POWDEC have epitaxial growth technologies on GaN, Sapphire, and SiC by MOCVD. ELO(epitaxial lateral overgrowth) also includes.

Application

Feature

Request form

Please fill columns of form and crick "confirm" on bottom of this page.

Epi layer structure
Epi layer Thickness(nm) Dopant Concentration(cm-3) Al or In ratio
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)
(ex:10nm) (ex:1e18cm-3) (ex:0.23)

Request of test items
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