POWDEC is developing next GaN devices for future

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Founder Message

At present, the earth we live in has exploded in CO2 emissions since the Industrial Revolution, causing a drastic change in the global environment such as global warming and extreme weather. What we can do from now on is to have a big energy revolution. Twenty years ago, I didn't think the current environment would worsen so much, but I believed that the material GaN, which was being developed by a large company at that time, would eventually become the core of devices that could control electrical energy with high efficiency. I jumped out of a company and started Powdec. At this time, I established the corporate philosophy of "contributing to the construction of infrastructure for the 21st century society through the development and production of GaN-based semiconductor devices and substrates.“
This year, which has been in business for 19 years, has successfully developed Powdec’s unique crystal growth technology and high-performance transistors and diodes for power electronics. This is because of the patrons who patronized POWDEC. I would like to express our deepest gratitude.
Now, considering the management of POWDEC to be a baton touch for the younger generation, I have decided to leave the representative director to Hironobu Narui. In the future, under his management, Powdec will continue to support our customers' business, so I look forward to your continued patronage.

President Message

I am Hironobui Narui, who has been appointed new President of Powdec K.K. With all the members of POWDEC, we will do our utmost to create a company that is more valuable and attractive to our customers, shareholders and business partners. We look forward to your guidance and encouragement as well as the former President Hiroji Kawai.
Powdec has been promoting its corporate philosophy, "Contribute to the construction of a 21st century society through the development and production of GaN-based semiconductor device infrastructure and substrates".
Based on this corporate philosophy, we will continue to pursue our vision of becoming a leading company that develops key devices and technologies that support the future of renewable energy that is friendly to the environment and people.
Powdec possesses a unique MOCVD crystal growth technology (which can grow wafers with less wafer dust and higher crystallinity than commercially available equipment), and can develop and manufacture small quantities of GaN-based electronic devices to optical devices. There is infrastructure. In particular, for GaN-based electronic devices, there is a power transistor technology (PSJ) that enables high breakdown voltage, high current capacity, high speed, and radiation resistance, and we would like to provide technical support for customers who are considering the power device business in the future. We also support the development of customers who want to commercialize GaN-based electronic devices or GaN-based light-emitting devices other than PSJ. In addition, Powdec also sells template subustrate to meet customer requirements. If you have any requests for GaN-based crystal growth and processes, please let us know. We hope you can contribute to your business development.

About us

Name	POWDEC K.K.
Address	＜Headquarters/Factory＞ 1-23-15 Wakagi-cho, Oyama-shi, Tochigi, 323-0028 JAPAN TEL： +81-285-22-9986，FAX： +81-285-22-9987
Company Purpose	Development and Production of Epitaxial Wafers of Nitride Semiconductors - AlGaN/GaN GaN-HEMT Substrates - AlGaN/Sapphire Ultra Violet Sensors Substrates - GaN/Sapphire GaN-Template Substrates AlN-Template Substrates - GaN/Sapphire ELO Substrates Development of GaN Semiconductor Devices - PSJ-FET, PSJ-SBD
Capital	50 million yen
Foundation	May 15, 2001
Director	President Hironobu Narui Founder Hiroji Kawai Director Shuichi Yagi Director Tatsuki Nazuka Auditor Eiichi Yamaguchi Auditor Tsutomu Kaneko
Bank	The Bank of Tokyo-Mitsubishi UFJ, Mizuho Bank, Ashikaga Bank
Customer	Semiconductor Companies, Research Institutes, Universities

役員紹介

History

2019 Feb

Capital reduced to JPY 50 million without compensation

2013 Oct

Press release on a high-voltage GaN-PSJ transistor on Silicon substrate

2013 May

Headquarter relocated in Oyama, Tochigi Pref.

2013 Apr

NEDO-financed aid project for commercialization of venture business

2012 Jul

Launch of a new 200mm-MOCVD

2012 Feb

Press release on a 6kV-GaN PSJ transistor

2011 Aug

NEDO-financed aid project for energy-saving innovative technology

2011 Mar

Press release on a new structure of HFET

2011 Feb

Facility investment of MOCVD granted by METI

2010 Nov

Press release on GaN vertical diodes

2010 Mar

Completed relocation of plant to Oyama, Tochigi Pref.

2007 Dec

Business and capital alliances with Furukawa Co.
Capital increased to JPY 768 million

2004 Dec

Capital increased to JPY 268 million by venture capitals

2001 Dec

Started operation in Kanagawa Pref.

2001 Nov

Business alliance with ULVAC

2001 May

Founded with a capital of JPY 56 million
Headquartered in Kanagawa Prefecture

Map

• Details

  ＜Head＞
  1-23-15 Wakagi-cho, Oyama-shi, Tochigi, 323-0028 JAPAN

• Details

  ＜Factory＞
  1-23-15 Wakagi-cho, Oyama-shi, Tochigi, 323-0028 JAPAN
  TEL： +81-285-22-9986，FAX： +81-285-22-9987

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